该芯片设计了GaAs基垂直腔面,有多个发射通道,很高的传输速率,高稳定性,且VCSEL单独使用接地源(GS)微探针、导线键合或倒装芯片键合在顶面上接触。所以该芯片可作为工程样品用于开发和评估光互连、光 背板和集成波导。
1. 多达12个并行通道
2. 每个通道高达28 Gbit/s
3. 高温稳定性
4. 装置对装置间距250微米
Parameter | Typical |
Emission wavelength | 850nm(available 835-865nm) |
Data rate | Up to 28 Gbit/s |
Threshold current | < 1 mA |
Peak output power | 4 mW |
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
Emission wavelength | λ | 835 | 865 | nm | ||
Maximum data rate | Gbps | NRZ | 25 | 28 | Gbit/s | |
Bandwidth | BW | f(3dB) | 15GHz at 85°C | 18 | GHz | |
Threshold current | I(th) | I(op) = 5mA | 0.4 | 0.5 | 1 | mA |
Operating current | V(op) | I(op) = 5mA | 2.3 | 2.5 | 2.7 | V |
Slope efficiency | η | I(op) = 5mA | 0.3 | 0.45 | W/A | |
Differential resistance | Rd | I(op) = 5mA | 65 | 75 | 85 | Ω |
Optical output power | P(op) | 1.5 | 2.5 | 4 | mW | |
Beam divergence | θ | FWHM | 18 | 20 | 25 | deg |
Spectral bandwidth (RMS) | ∆λRMS | I(op)= 5mA | 0.4 | 0.6 | nm | |
Rise / Fall time | τR / τF | 20%-80% | 16 | 20 | ps | |
Relative intensity noise | RIN | -128 | dB/Hz | |||
Wavelength tuning over current | 0.3 | nm/mA | ||||
Wavelength tuning over temp | 0.07 | nm/K | ||||
Thermal impedance | Z(Thermal) | 2 | °C/mW |