D30-850C high speed VCSEL chip

These high-speed top-illuminated GaAs-based pin photodetector chips are available for the usein development and evaluation of lasers and the next-generation of data communicationssystems. The chip exhibits a responsivity greater than 0.4 A/W at 850 nm. The PDs are availableas individual chips or as linear arrays (4-ch, 12-ch) allowing alignment to single mode fiber ormulti mode fibers. The chip can be wire bonded or flip-chip stud bonded.

Chip Size

Features

1. Single chip or 4/12 ch array

2. Up to 40 Gbit/s per channel

3. High temperature stability

4. Pitch size 250µm

Product Parameters

Parameter	Typical
Operating Wavelength	700-890nm
Data Rate	up 40 Gbit/s per channel
Responsivity	0.4 W/A
Small Signal -3dB Bandwidth	30 GHz

Electro-optical Properties

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Data bit rate	BR				40	Gbit/s
Small signal -3dB bandwidth	BW(f3db)	V(bias)=-2V		30		GHz
Operating Wavelength	λ		700	850	890	nm
Rise / Fall time	τR / τF	20%-80%		9		ps
Responsivity	R			0.4		A/W
Capacitance	C				80	fF
Differential resistance	Rd	5-10mA		80	120	Ω
Capacitance	C			300		fF
Dark current	I(D)	V(bias)=-5v		≤ 1		nA