V25-850C series High speed VCESL chip

The chip is designed with GaAs based vertical cavity surface, multiple emission channels, high transmission rate and high stability, and VCSEL is contacted on the top surface by using ground source (GS) microprobe, wire bonding or flip chip bonding alone. So the chip can be used as an engineering sample to develop and evaluate optical interconnection, optical backplane and integrated waveguide.

Chip Size

Features

1. Up to 12 parallel channels

2. Up to 28 Gbit/s per channel

3. High temperature stability

4. Device-to-device pitch of 250 µm

Product Parameters

Parameter	Typical
Emission wavelength	850nm(available 835-865nm)
Data rate	Up to 28 Gbit/s
Threshold current	< 1 mA
Peak output power	4 mW

Electro-optical Properties

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Emission wavelength	λ		835		865	nm
Maximum data rate	Gbps	NRZ		25	28	Gbit/s
Bandwidth	BW	f(3dB)	15GHz at 85°C	18		GHz
Threshold current	I(th)	I(op) = 5mA	0.4	0.5	1	mA
Operating current	V(op)	I(op) = 5mA	2.3	2.5	2.7	V
Slope efficiency	η	I(op) = 5mA	0.3		0.45	W/A
Differential resistance	Rd	I(op) = 5mA	65	75	85	Ω
Optical output power	P(op)		1.5	2.5	4	mW
Beam divergence	θ	FWHM	18	20	25	deg
Spectral bandwidth (RMS)	∆λRMS	I(op)= 5mA		0.4	0.6	nm
Rise / Fall time	τR / τF	20%-80%		16	20	ps
Relative intensity noise	RIN			-128		dB/Hz
Wavelength tuning over current				0.3		nm/mA
Wavelength tuning over temp				0.07		nm/K
Thermal impedance	Z(Thermal)			2		°C/mW